NCE0218F mosfet equivalent, nce n-channel enhancement mode power mosfet.
* VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V
(Typ:64mΩ)
Schematic diagram
* High density cell design for ultra low Rdson
* Fully characterized Avalanche vo.
GENERAL FEATURES
* VDS =200V,ID =18A RDS(ON) < 80mΩ @ VGS=10V
(Typ:64mΩ)
Schematic diagram
* High density c.
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